Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO262 |
Single-N |
650V |
30（±V） |
3.5V |
8A |
|
|
460(mΩ) |
SJ_Deep-Trench |
Detailed parameter description:
- Model: VBN165R08SE
- Brand: VBsemi
- Type: Single N MOSFET
- Maximum drain-source voltage (VDS): 650V
- Maximum gate-to-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at 10V: 460m次
- Maximum drain current (ID): 8A
- Technology: SJ_Deep-Trench
-Package:TO262
Domain and module applications：
Example application:
1. Power module: Due to its high withstand voltage and current capabilities, VBN165R08SE can be used in power switches and voltage regulators in power modules, such as inverters and voltage regulators.
2. Electric vehicle controller: In the electric vehicle controller, this device can be used in motor drive and battery management systems to achieve efficient energy conversion and power output control.
3. Solar inverter: In solar photovoltaic systems, VBN165R08SE can be used in the DC-AC conversion stage of the inverter to convert solar energy into usable alternating current.
4. Industrial automation equipment: This device is suitable for power switch modules in industrial robots, PLCs and automation equipment, providing reliable power control and protection functions.
5. LED lighting system: As a power switching device in LED lighting systems, VBN165R08SE can be used in LED drive circuits to achieve lighting brightness adjustment and energy-saving functions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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