Featured Model

Your present location > Home page > Featured Model

1332GEU-VB Product details

Product introduction:

### 1332GEU-VB MOSFET Product Introduction

VBsemi's 1332GEU-VB is a single N-channel power MOSFET in SC70-3 package technology. This MOSFET operates at a drain-source voltage (VDS) of 20V and a gate-source voltage (VGS) of 12V (±V). Its on-state resistance (RDS(ON)) is 48mΩ at a gate-source voltage of 2.5V, 40mΩ at 4.5V, and 36mΩ at 10V. The device has a rated current (ID) of 4A and uses Trench technology, making it suitable for low-power applications.


File download

Download PDF document
Download now

VBsemi online shopping mall:

Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SC70-3 Single-N-Channel 20V 0.5~1.5V 4A 48mΩ 40mΩ 36mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SC70-3 Single-N-Channel Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SC70-3 Single-N-Channel 20V 0.5~1.5V 4A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SC70-3 Single-N-Channel 20V 0.5~1.5V 4A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SC70-3 Single-N-Channel
### 1332GEU-VB MOSFET parameter description

- **Model: ** 1332GEU-VB
- **Package: ** SC70-3
- **Configuration: ** Single N-channel
- **Drain-source voltage (VDS): ** 20V
- **Gate-source voltage (VGS): ** 12 (±V)
- **Threshold voltage (Vth): ** 0.5~1.5V
- **On-state resistance (RDS(ON)) @VGS=2.5V: ** 48mΩ
- **On-state resistance (RDS(ON)) @VGS=4.5V: ** 40mΩ
- **On-state resistance (RDS(ON)) @VGS=10V: ** 36mΩ
- **Rated current (ID): ** 4A
- **Technology: ** Trench

Domain and module applications:

### 1332GEU-VB MOSFET Application Fields and Module Examples

1. **Portable Devices:**
1332GEU-VB MOSFET is suitable for power management and switch control in portable devices. Its low power characteristics and small package make it an ideal choice for portable devices such as smartphones, tablets, etc.

2. **Medical Devices:**
In medical devices, 1332GEU-VB MOSFET can be used to control the power supply and drive system of medical devices. Its low power characteristics and reliability enable it to meet the power requirements of medical devices.

3. **Sensor Control:**
In sensor control applications, 1332GEU-VB MOSFET can be used to control the power supply and signal processing of sensors. Its low power characteristics and fast switching speed ensure the stable operation of the sensor system.

4. **Power Management Modules:**
In various power management modules, 1332GEU-VB MOSFET can be used to control the switching of power supplies and power management. Its low power characteristics and low on-resistance ensure efficient operation of the module.

Through these application areas and module examples, the 1332GEU-VB MOSFET demonstrates its applicability in low-power demand scenarios and becomes an indispensable core component in various electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

Sample Req

QQ

Telephone

400-655-8788

WeChat

Shopping

Topping

Sample Req
Online
Telephone
WeChat