Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SC70-3 |
Single-N-Channel |
20V |
|
0.5~1.5V |
4A |
48mΩ |
40mΩ |
36mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SC70-3 |
Single-N-Channel |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| SC70-3 |
Single-N-Channel |
20V |
|
0.5~1.5V |
4A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| SC70-3 |
Single-N-Channel |
20V |
|
0.5~1.5V |
4A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SC70-3 |
Single-N-Channel |
|
|
|
|
|
|
|
### 1332GEU-VB MOSFET parameter description
- **Model: ** 1332GEU-VB
- **Package: ** SC70-3
- **Configuration: ** Single N-channel
- **Drain-source voltage (VDS): ** 20V
- **Gate-source voltage (VGS): ** 12 (±V)
- **Threshold voltage (Vth): ** 0.5~1.5V
- **On-state resistance (RDS(ON)) @VGS=2.5V: ** 48mΩ
- **On-state resistance (RDS(ON)) @VGS=4.5V: ** 40mΩ
- **On-state resistance (RDS(ON)) @VGS=10V: ** 36mΩ
- **Rated current (ID): ** 4A
- **Technology: ** Trench
Domain and module applications:
### 1332GEU-VB MOSFET Application Fields and Module Examples
1. **Portable Devices:**
1332GEU-VB MOSFET is suitable for power management and switch control in portable devices. Its low power characteristics and small package make it an ideal choice for portable devices such as smartphones, tablets, etc.
2. **Medical Devices:**
In medical devices, 1332GEU-VB MOSFET can be used to control the power supply and drive system of medical devices. Its low power characteristics and reliability enable it to meet the power requirements of medical devices.
3. **Sensor Control:**
In sensor control applications, 1332GEU-VB MOSFET can be used to control the power supply and signal processing of sensors. Its low power characteristics and fast switching speed ensure the stable operation of the sensor system.
4. **Power Management Modules:**
In various power management modules, 1332GEU-VB MOSFET can be used to control the switching of power supplies and power management. Its low power characteristics and low on-resistance ensure efficient operation of the module.
Through these application areas and module examples, the 1332GEU-VB MOSFET demonstrates its applicability in low-power demand scenarios and becomes an indispensable core component in various electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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