Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO262 |
Single-N |
30V |
20（±V） |
1.7V |
90A |
|
7 (mΩ) |
4(mΩ) |
Trench |
Product model: VBN1303
Brand: VBsemi
parameter:
- Unipolar N-channel field effect transistor (Single N)
- Rated drain-source voltage (VDS): 30V
- Rated gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.7V
- Drain-source on-resistance (m次) at VGS=4.5V: 7
- Drain-source on-resistance (m次) at VGS=10V: 4
- Maximum drain current (ID): 90A
- Technology: Trench (groove type)
Package: TO262
Domain and module applications：
for example:
1. **Power module**: In the power module, VBN1303 can be used as a switching tube to control the stability and efficiency of the power output. Due to its low on-resistance and high drain current, it can effectively reduce the power loss of the power module and improve the energy efficiency of the system.
2. **Motor control**: In the motor control system, VBN1303 can be used as a switching tube in the motor driver to control the start and stop of the motor and speed adjustment. Its high drain current and low voltage drop characteristics enable it to perform well in high current and high speed drive applications.
3. **Photovoltaic inverter**: In photovoltaic inverters, VBN1303 can be used as a switching tube in the inverter to convert the DC power generated by the solar panel into AC power. Its high drain current and low voltage drop characteristics can improve the conversion efficiency and stability of the inverter while reducing energy loss.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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