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VBN1204N Product details

Product introduction:

VBN1204N is a single crystal N-channel field effect transistor launched by VBsemi. Its Trench technology and low-clearance resistance of 38mΩ ensure efficient current transmission and stable power output. It is suitable for the power system and drive control of electric vehicles.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO262 Single-N 200V 20(±V) 3V 445A 38(mΩ) Trench
parameter:
- Single crystal N-channel field effect transistor
- Rated drain-source voltage (VDS): 200V
- Rated gate-source voltage (VGS)(㊣V): ㊣20V
- Threshold voltage (Vth): 3V
- Drain-source resistance (m次) at VGS=10V: 38
- Maximum drain current (ID): 445A
- Technology: Trench
Package: TO262

Domain and module applications:

This product is suitable for the following areas and modules:

1. High power power module:
VBN1204N field effect transistor is suitable for high-power power modules, such as large industrial equipment and power grid systems. Its rated drain-source voltage of 200V and maximum drain current of 445A can provide high-power power transmission and stable voltage output, meeting the high requirements for power conversion and power management in the industrial field.

2. Electric vehicle controller:
Due to its high performance and high current capacity, the VBN1204N FET is suitable for electric vehicle controllers such as motor drivers and battery management systems. Its Trench technology and low drain resistance of 38mΩ ensure efficient current transfer and stable power output, suitable for powertrain and drive control of electric vehicles.

3. Power modulator module:
This product is suitable for power modulator modules such as frequency converters and power electronic regulators. Its high drain current capacity and TO262 package enable it to provide stable and reliable performance in high-power power transmission and voltage regulation, suitable for industrial production and power conditioning systems.

4. High-efficiency energy converter:
The VBN1204N FET is also suitable for high-efficiency energy converters such as solar inverters and wind power systems. Its high drain current capacity and low drain resistance ensure efficient energy conversion and stable voltage output, making it suitable for energy conversion and power management in renewable energy systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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