Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220F |
Single-P |
-60V |
20（±V） |
-1.7V |
-30A |
|
60 (mΩ) |
50 (mΩ) |
Trench |
Detailed parameter description:
- Rated drain-source voltage (VDS): -60V
- Gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): -1.7V
- Drain-source resistance (m次) when gate-source voltage is 4.5V: 60m次
- Drain-source resistance (m次) when gate-source voltage is 10V: 50m次
- Quiescent drain current (ID): -30A
Domain and module applications：
VBMB2658 is suitable for a variety of fields and modules. It has the characteristics of high-performance power switches and can be used in the following scenarios:
1. Electric vehicles: This MOSFET can be used in battery management systems and motor control modules in electric vehicles to ensure high efficiency and drive control of electric vehicles.
2. Power inverter: Among power inverters, VBMB2658 can be used for high-efficiency power conversion and stable output power, and is suitable for solar inverters, UPS systems, etc.
3. Industrial control: Suitable for power switch modules in industrial control equipment, such as frequency converters, servo drives, etc., to achieve high performance and reliability.
4. Automotive electronic systems: This MOSFET can be used in power management and drive control modules in automotive electronic systems, such as electric vehicles, on-board chargers, etc., to ensure the stability and safety of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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