Featured Model

Your present location > Home page > Featured Model

11N65M5-VB TO220 Product details

Product introduction:

### 11N65M5-VB MOSFET Product Introduction

VBsemi's 11N65M5-VB is a single N-channel power MOSFET in TO220 packaging technology. This MOSFET operates at a drain-source voltage (VDS) of 700V and a gate-source voltage (VGS) of 30V (±V). Its on-state resistance (RDS(ON)) is 450mΩ at a gate-source voltage of 10V. The device has a rated current (ID) of 11A and uses SJ_Multi-EPI technology. It has high voltage tolerance and low on-resistance and is suitable for high-voltage, high-power applications.

File download

Download PDF document
Download now

VBsemi online shopping mall:

Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N-Channel 700V 3.5V 11A 450mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N-Channel SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N-Channel 700V 3.5V 11A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N-Channel 700V 3.5V 11A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N-Channel
### 11N65M5-VB MOSFET parameter description

- **Model: ** 11N65M5-VB
- **Package: ** TO220
- **Configuration: ** Single N-channel
- **Drain-source voltage (VDS): ** 700V
- **Gate-source voltage (VGS): ** 30 (±V)
- **Threshold voltage (Vth): ** 3.5V
- **On-state resistance (RDS(ON)) @VGS=10V: ** 450mΩ
- **Rated current (ID): ** 11A
- **Technology: ** SJ_Multi-EPI

Domain and module applications:

### 11N65M5-VB MOSFET Applications and Module Examples

1. **Power Inverter:**
11N65M5-VB MOSFET is suitable for high-voltage switches in solar inverters and grid inverters. Its high drain-source voltage and low on-resistance enable it to stably convert DC to AC in the inverter and provide reliable power output.

2. **Industrial High-Voltage Power Supply:**
In industrial equipment, especially those that require high-voltage power, 11N65M5-VB MOSFET can be used to control the switch of high-voltage power supply. Its high drain-source voltage and high reliability make it an ideal choice in industrial equipment.

3. **Electric Vehicle Charging Pile:**
In electric vehicle charging piles, 11N65M5-VB MOSFET can be used to control the DC-DC converter of the charging pile. Its high rated current and low on-resistance enable it to efficiently convert electrical energy and provide fast charging services.

4. **Medical equipment: **
In some medical equipment that requires high-voltage switching, such as X-ray machines and MRI equipment, 11N65M5-VB MOSFET can be used to control the switching of power supply. Its high voltage withstand capability and low on-resistance ensure the stability and reliability of the equipment.

Through these application fields and module examples, 11N65M5-VB MOSFET demonstrates its applicability in high-voltage and high-power demand scenarios, becoming an indispensable core component in various electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

Sample Req

QQ

Telephone

400-655-8788

WeChat

Shopping

Topping

Sample Req
Online
Telephone
WeChat