Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220F |
Single-P |
-60V |
20（±V） |
-2.5V |
-65A |
|
13 (mΩ) |
9 (mΩ) |
Trench |
has the following parameters:
Maximum drain-source voltage (VDS) is -60V,
The maximum gate-source voltage (VGS) is ㊣20V, and the threshold voltage (Vth) is -2.5V.
When the gate-source voltage is 4.5V, the drain-source resistance is 13m次;
When the gate-source voltage is 10V, the drain-source resistance is 9m次.
Its maximum drain current (ID) is -65A,
Using trench technology (Trench).
Domain and module applications：
VBMB2609 transistor is suitable for a variety of fields and modules. For example,
In motor control modules it can be used in motor drivers, power switches and speed regulators.
Due to its high drain-source current and low drain-source resistance, this transistor is particularly suitable for use in high-performance motor control and power amplification applications. In power management modules, it can be used in DC-DC converters, power inverters and battery chargers.
Furthermore, in industrial automation modules it can be used in power switches, sensor interfaces and control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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