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VBMB2255M Product details
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**Application Introduction:**
VBMB2255M is a single P-type field effect transistor with excellent performance parameters and reliability. Its maximum negative pressure value reaches -250V, which is suitable for applications in various negative pressure working environments. Under different gate-source voltages, the on-resistance shows stable characteristics, respectively 600mΩ (at 4.5V) and 500mΩ (at 10V), which can meet the needs of different circuit designs. In addition, the maximum drain current reaches -10A, enabling stable operation under high load conditions.
VBMB2255M is a single P-type field effect transistor with excellent performance parameters and reliability. Its maximum negative pressure value reaches -250V, which is suitable for applications in various negative pressure working environments. Under different gate-source voltages, the on-resistance shows stable characteristics, respectively 600mΩ (at 4.5V) and 500mΩ (at 10V), which can meet the needs of different circuit designs. In addition, the maximum drain current reaches -10A, enabling stable operation under high load conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -250V | 20（±V） | -3V | -10A | 600 (mΩ) | 500 (mΩ) | Trench |
**VBMB2255M**
**Brand:** VBsemi
**parameter:**
- **Single P**
- **VDS(V):** The maximum negative voltage value is -250V
- **VGS(㊣V):** Gate-source voltage is ㊣20V
- **Vth(V):** Threshold voltage is -3V
- **VGS=4.5V(m次):** When the gate-source voltage is 4.5V, the on-resistance is 600m次
- **VGS=10V(m次):** When the gate-source voltage is 10V, the on-resistance is 500m次
- **ID (A):** Maximum drain current is -10A
- **Technology:** Using trench technology (Trench)
**Package:** TO220F
**Brand:** VBsemi
**parameter:**
- **Single P**
- **VDS(V):** The maximum negative voltage value is -250V
- **VGS(㊣V):** Gate-source voltage is ㊣20V
- **Vth(V):** Threshold voltage is -3V
- **VGS=4.5V(m次):** When the gate-source voltage is 4.5V, the on-resistance is 600m次
- **VGS=10V(m次):** When the gate-source voltage is 10V, the on-resistance is 500m次
- **ID (A):** Maximum drain current is -10A
- **Technology:** Using trench technology (Trench)
**Package:** TO220F
Domain and module applications：
**Examples of applicable fields and modules:**
In the field of power management, VBMB2255M can be used in switching power supply modules, voltage stabilizing circuits, inverters and other modules to achieve efficient power conversion and stable voltage output. In the field of automotive electronics, it can be used in automotive ignition systems, on-board chargers and electric vehicle drive modules to ensure the reliability and stability of vehicle systems. In the field of industrial control, the transistor can be used in motor drive modules, power inverters and industrial automation equipment to achieve precise motor control and efficient energy conversion. In short, VBMB2255M is suitable for various application scenarios that require high-performance field effect transistors, providing a reliable solution for the design and manufacturing of electronic products.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
