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10N40L-TA3-T-VB Product details

Product introduction:

10N40L-TA3-T-VB is a single-channel N-channel MOSFET in TO220 package. It has the following main parameters:

- VDS (drain-source voltage): 650V
- VGS (gate-source voltage): ±30V
- Vth (threshold voltage): 3.5V
- RDS(ON) (on-resistance): 500mΩ at VGS=10V
- ID (drain current): 9A
- Technology: SJ_Multi-EPI

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N-Channel 650V 3.5V 9A 500mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N-Channel SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N-Channel 650V 3.5V 9A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N-Channel 650V 3.5V 9A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N-Channel
The following are the detailed parameter descriptions of this model:

1. **VDS (drain-source voltage)**: 650V, indicating the maximum drain-source voltage that the device can withstand.
2. **VGS (gate-source voltage)**: ±30V, indicating the voltage range between the gate and the source.
3. **Vth (threshold voltage)**: 3.5V, indicating the voltage between the gate and the source, which makes the device start to conduct.
4. **RDS(ON) (on-resistance)**: 500mΩ when VGS=10V, indicating the resistance of the device when it is on, affecting the power loss.
5. **ID (drain current)**: 9A, indicating the maximum drain current that the device can withstand, directly affecting the power handling capability of the device.
6. **Technology**: SJ_Multi-EPI, using advanced multi-epitaxial technology, so that the device has lower on-resistance and higher efficiency.

Domain and module applications:

The product profile of this model is detailed as follows:

10N40L-TA3-T-VB is a high-voltage N-channel MOSFET suitable for applications requiring high voltage, high power and high reliability. Its TO220 package makes it suitable for working in various environmental conditions and has good heat dissipation performance. The use of SJ_Multi-EPI technology makes the device have low on-resistance and high drain current characteristics, providing efficient power conversion and reliable performance.


This product is suitable for the following fields and modules:

- **Power management module**: Due to its high voltage and moderate drain current, it is suitable for power management modules such as high-voltage power amplifiers and switch modules.
- **Industrial control**: It can be used in high-voltage switch circuits, motor drives and other modules in industrial control systems to provide reliable power control.
- **Lighting**: It is suitable for high-voltage LED drivers and other lighting applications, providing efficient power conversion and stable performance.

Please note that the above are just some common application areas, and the specific application depends on the actual design requirements and environment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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