Product introduction:
10N10SC-VB is a single N-channel MOSFET in SOP8 package, with 100V drain-source voltage (VDS), 20V gate-source voltage (VGS, ±), and 1.8V threshold voltage (Vth). Its on-resistance RDS(ON) is 27mΩ at VGS=4.5V, 20mΩ at VGS=10V, and the maximum drain current ID is 10.4A. It is manufactured using trench technology.
Product Introduction:
10N10SC-VB is a high-performance single N-channel MOSFET with high drain-source voltage and moderate on-resistance, suitable for applications requiring medium power and reliability. Its SOP8 package design makes it easy to install and dissipate heat, and is widely used in various fields and modules.
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