Product introduction:
105N10LSF-VB is a single N-channel MOSFET in DFN8 (5X6) package, with 100V drain-source voltage (VDS), 20V gate-source voltage (VGS, ±), and 2.5V threshold voltage (Vth). Its on-resistance RDS(ON) is 12.36mΩ at VGS=4.5V, 9mΩ at VGS=10V, and the maximum drain current ID is 65A. It is manufactured using trench technology.
Product Introduction:
105N10LSF-VB is a high-performance single N-channel MOSFET with high drain-source voltage and moderate on-resistance, suitable for applications requiring medium power and reliability. Its DFN8 (5X6) package design makes it suitable for small-size applications and has good heat dissipation performance, and is widely used in various fields and modules.
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