Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220F |
Single-N |
900V |
30（±V） |
3.5V |
9A |
|
|
560(mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Product model: VBMB19R09S
- Brand: VBsemi
- Type: Single N-channel power MOSFET
- Drain-source voltage (VDS): 900V
- Gate-source voltage (VGS): 30V (positive and negative)
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 560
- Maximum drain current (ID): 9A
- Technology: SJ_Multi-EPI
-Package: TO220F
Domain and module applications：
Examples of applicable fields and modules:
1. Electric vehicles: As a power switching component in electric vehicles, VBMB19R09S can be used to control the start, stop and speed adjustment of the motor to improve the performance and efficiency of electric vehicles.
2. Industrial power modules: Due to its high drain-source voltage and large drain current, this MOSFET is suitable for industrial power modules such as inverters, DC power supplies and UPS.
3. Solar inverter: As a power switching element in a solar inverter, VBMB19R09S can achieve efficient conversion and output of solar energy.
4. Power management module: Among various power management modules, this product can be used for power switch control, such as power switches, voltage stabilizers, etc.
5. LED lighting system: In the LED lighting system, VBMB19R09S can be used to drive LED lamp beads to achieve dimming and switch control of the light.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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