Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220F |
Single-N |
900V |
30（±V） |
3.5V |
5A |
|
|
1500 (mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Model: VBMB19R05S
- Brand: VBsemi
- Type: Single N-type field effect transistor
- Technology: SJ_Multi-EPI
- Drain-source voltage (VDS): 900V
- Gate-source voltage (VGS): ㊣30V
- Gate threshold voltage (Vth): 3.5V
- On-resistance when VGS=10V: 1500m次
- Maximum drain current (ID): 5A
-Package: TO220F
Domain and module applications：
Applicable areas and modules:
This product is suitable for the following areas and modules:
1. High-voltage switching power supply: Due to its high drain-source voltage and moderate on-resistance, it is suitable for designing high-voltage switching power supplies and voltage regulators.
2. Industrial control system: It can be used in power switch modules in industrial control systems to achieve precise control of industrial equipment.
3. Solar inverter: In a solar inverter, it can be used as a power switch module to achieve high-efficiency conversion of solar panels and grid connection.
4. Electric vehicle charger: In electric vehicle chargers, it can be used in power switching circuits to achieve high-efficiency charging and protection of batteries.
These are just some examples, in fact this product may also be suitable for many other fields and modules, depending on its technical parameters and application requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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