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VBMB18R25S Product details

Product introduction:

Product introduction:
VBsemi's VBMB18R25S is a Single N MOSFET with a drain-source voltage (VDS) of 800V, a gate-source voltage (VGS, positive and negative) of 30V, and a gate threshold voltage (Vth) of 3.5V. The device is manufactured using SJ_Multi-EPI technology and is packaged in TO220F.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 800V 30(±V) 3.5V 25A 138(mΩ) SJ_Multi-EPI
Detailed parameter description:
- VDS (drain-source voltage): 800V
- VGS (gate-source voltage): ㊣30V
- Vth (gate threshold voltage): 3.5V
- Drain-source resistance (m次) at VGS=10V: 138
- Maximum drain current (ID): 25A

Domain and module applications:

Examples of applicable fields and modules of this product:
1. Electric vehicle motor driver: Due to its high drain-source voltage and large current characteristics, VBMB18R25S can be used in electric vehicle motor driver modules to provide reliable power output.
2. Industrial high-voltage power supply system: In the industrial field, VBMB18R25S can be used as a switching power supply module in high-voltage power supply systems to achieve efficient energy conversion and stable power output.
3. Solar inverter: Due to its high voltage and high current characteristics, VBMB18R25S is suitable for the power module of solar inverter, which is used to convert solar power into usable AC power.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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