VBMB18R25S Product details
Product introduction:
VBsemi's VBMB18R25S is a Single N MOSFET with a drain-source voltage (VDS) of 800V, a gate-source voltage (VGS, positive and negative) of 30V, and a gate threshold voltage (Vth) of 3.5V. The device is manufactured using SJ_Multi-EPI technology and is packaged in TO220F.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 30(±V) | 3.5V | 25A | 138(mΩ) | SJ_Multi-EPI |
- VDS (drain-source voltage): 800V
- VGS (gate-source voltage): ㊣30V
- Vth (gate threshold voltage): 3.5V
- Drain-source resistance (m次) at VGS=10V: 138
- Maximum drain current (ID): 25A
Domain and module applications:
1. Electric vehicle motor driver: Due to its high drain-source voltage and large current characteristics, VBMB18R25S can be used in electric vehicle motor driver modules to provide reliable power output.
2. Industrial high-voltage power supply system: In the industrial field, VBMB18R25S can be used as a switching power supply module in high-voltage power supply systems to achieve efficient energy conversion and stable power output.
3. Solar inverter: Due to its high voltage and high current characteristics, VBMB18R25S is suitable for the power module of solar inverter, which is used to convert solar power into usable AC power.
Technical support:
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