Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220F |
Single-N |
800V |
30（±V） |
3.5V |
20A |
|
|
205(mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Product model: VBMB18R20SFD
- Brand: VBsemi
- Type: Single N MOSFET
-Package: TO220F
- The main parameters:
- Drain-source voltage (VDS): 800V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 205
- Maximum drain current (ID): 20A
- Technology: SJ_Multi-EPI
Domain and module applications：
Examples of applicable fields and modules of this product:
1. Industrial power supply system: used in switching power supply modules in industrial-grade power systems to provide stable power output.
2. Solar inverter: It can be used in the DC-AC conversion stage in the solar inverter to help convert the DC power generated by the solar panel into AC power.
3. Electric vehicle charging piles: Suitable for power switch modules in electric vehicle charging piles, providing efficient and fast charging capabilities to meet the charging needs of electric vehicles.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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