Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N-Channel |
800V |
|
3.5V |
7A |
|
|
850mΩ |
SJ_Multi-EPI |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N-Channel |
|
|
|
|
|
SJ_Multi-EPI |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N-Channel |
800V |
|
3.5V |
7A |
|
SJ_Multi-EPI |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N-Channel |
800V |
|
3.5V |
7A |
|
SJ_Multi-EPI |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N-Channel |
|
|
|
|
|
|
|
2. Parameter description:
- VDS: 800V is the maximum drain-source voltage of the MOSFET. Exceeding this voltage may cause device damage.
- VGS: 30V (±) is the maximum gate-source voltage range of the MOSFET. Exceeding this range may cause device damage.
- Vth: 3.5V is the threshold voltage of the MOSFET, that is, when the gate voltage is higher than 3.5V, the MOSFET starts to turn on.
- RDS(ON): It is 850mΩ when VGS=10V, which means that when the gate voltage is 10V, the static drain-source resistance of the MOSFET is 850mΩ, which determines the resistance of the MOSFET when it is turned on.
- ID: 7A is the maximum continuous drain current of the MOSFET. Exceeding this current may cause the device to overheat and be damaged.
Domain and module applications：
3. Application fields and module examples:
- Power modules: Due to its high drain-source voltage and low static drain-source resistance, the 06N80C3-VB is suitable for high-voltage power modules, such as industrial power supplies and communication equipment power supplies.
- Power inverters: It can be used in power inverters to convert DC power to AC power, such as solar inverters and variable frequency air conditioners.
- Power transmission systems: Due to its high voltage and current capabilities, it is suitable for switching devices and power control in power transmission systems to ensure the stability and efficient operation of the system.
Please note that the above examples are only used to illustrate the possible application fields and modules of this MOSFET, and the actual application needs to be evaluated according to specific design requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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