Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220F |
Single-N |
800V |
30（±V） |
3.5V |
18A |
|
|
220(mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Product model: VBMB18R18S
- Brand: VBsemi
- Type: Single N-channel field effect transistor
- VDS (Drain-Source Voltage): 800V
- VGS (gate-source voltage): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance at VGS=10V: 220m次
- Maximum drain current (ID): 18A
- Technology: SJ_Multi-EPI
- Package: TO220F
Domain and module applications：
Application examples:
The product is suitable for multiple areas and modules, such as:
1. High-performance power module: Due to its high voltage and high current characteristics, VBMB18R18S is suitable for high-performance power modules, including industrial power supplies, communication equipment, and electric vehicle chargers.
2. Solar inverter: In a solar inverter, this device can be used to convert DC power generated by solar panels into AC power to supply to home or commercial power systems.
3. Automotive electronics: In the power module and on-board charging pile of electric vehicles, VBMB18R18S can be used as a motor driver and power management module to support the vehicle's power system and electrical system.
4. Industrial automation: Used in modules such as switching power supplies, inverters and voltage regulators in industrial automation systems to provide stable power supply and power control functions.
The above are some examples of how this product is applicable to different areas and modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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