VBMB18R17SE Product details
Product introduction:
VBsemi's VBMB18R17SE model is a single-channel N-channel power MOSFET with a drain-source voltage (VDS) of 800V, a drain current (ID) of 17A, and a threshold voltage (Vth) of 3.5V. It adopts SJ_Deep-Trench technology and is packaged as TO220F. This MOSFET is suitable for high voltage applications and has low on-resistance and high drain current capability.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 30(±V) | 3.5V | 17A | 280(mΩ) | SJ_Deep-Trench |
- Product model: VBMB18R17SE
- Brand: VBsemi
- Type: Single channel N-channel power MOSFET
- Maximum drain-source voltage (VDS): 800V
- Gate-source voltage (VGS) range: ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance at VGS=10V (m次): 280
- Maximum drain current (ID): 17A
- Technology: SJ_Deep-Trench
- Package: TO220F
Domain and module applications:
1. Power management module: VBMB18R17SE can be used as a switching power supply in the power management module to achieve stable voltage output and current control.
2. Lighting driver: In LED lighting drivers, high-performance power switching devices are required to control current and brightness. VBMB18R17SE can be used as a switching element to provide reliable driving functions.
3. Automotive electronics: In the field of automotive electronics, it is necessary to withstand high voltage and current in automotive circuits. VBMB18R17SE can be used for power control and protection circuits in automotive electronic modules.
Technical support:
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