Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220F |
Single-N |
800V |
30（±V） |
3.5V |
17A |
|
|
280(mΩ) |
SJ_Deep-Trench |
Detailed parameter description:
- Product model: VBMB18R17SE
- Brand: VBsemi
- Type: Single channel N-channel power MOSFET
- Maximum drain-source voltage (VDS): 800V
- Gate-source voltage (VGS) range: ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance at VGS=10V (m次): 280
- Maximum drain current (ID): 17A
- Technology: SJ_Deep-Trench
- Package: TO220F
Domain and module applications：
Examples of application areas:
1. Power management module: VBMB18R17SE can be used as a switching power supply in the power management module to achieve stable voltage output and current control.
2. Lighting driver: In LED lighting drivers, high-performance power switching devices are required to control current and brightness. VBMB18R17SE can be used as a switching element to provide reliable driving functions.
3. Automotive electronics: In the field of automotive electronics, it is necessary to withstand high voltage and current in automotive circuits. VBMB18R17SE can be used for power control and protection circuits in automotive electronic modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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