Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N-Channel |
30V |
|
1.7V |
120A |
|
4mΩ |
3mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N-Channel |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N-Channel |
30V |
|
1.7V |
120A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N-Channel |
30V |
|
1.7V |
120A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N-Channel |
|
|
|
|
|
|
|
2. Parameter description:
- VDS: 30V is the maximum drain-source voltage of the MOSFET. Exceeding this voltage may cause device damage.
- VGS: 20V (±) is the maximum gate-source voltage range of the MOSFET. Exceeding this range may cause device damage.
- Vth: 1.7V is the threshold voltage of the MOSFET, that is, when the gate voltage is higher than 1.7V, the MOSFET starts to turn on.
- RDS(ON): 4mΩ at VGS=4.5V and 3mΩ at VGS=10V, which means that the static drain-source resistance of the MOSFET is different at different gate voltages.
- ID: 120A is the maximum continuous drain current of the MOSFET. Exceeding this current may cause the device to overheat and be damaged.
Domain and module applications：
3. Application fields and module examples:
- Power modules: Due to its low drain-source resistance and high drain current capability, 05N03L-VB is suitable for high-performance power modules such as server power supplies and communication equipment power supplies.
- Automotive electronic systems: It can be used in DC-DC converters and battery management systems in automotive electronic systems, providing efficient power conversion and management due to its high current capability and low on-resistance.
- Industrial control modules: Due to its high voltage and current capabilities, it is suitable for switch controllers and inverters in industrial control systems to ensure system stability and efficient operation.
Please note that the above examples are only used to illustrate the possible application fields and modules of this MOSFET, and the actual application needs to be evaluated according to specific design requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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