Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220F |
Single-N |
800V |
30（±V） |
3.5V |
11A |
|
|
480(mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Product model: VBMB18R11S
- Brand: VBsemi
- Type: Single N-channel field effect transistor
- VDS (drain-source voltage): 800V
- VGS (gate-source voltage): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance when VGS=10V: 480m次
- Maximum drain current (ID): 11A
- Technology: SJ_Multi-EPI
-Package: TO220F
Domain and module applications：
Application examples:
The product is suitable for multiple areas and modules, such as:
1. Industrial power electronics: VBMB18R11S can be used in modules such as switching power supplies, inverters and voltage regulators in industrial power electronic equipment to provide stable power supply and power control.
2. Automotive electronics: In automotive electronic systems, such as power modules of electric vehicles and on-board charging piles, this device can be used as a motor driver and power management module to support the vehicle's power system and electrical system.
3. Solar inverter: VBMB18R11S can be used in solar inverters to convert DC power generated by solar panels into AC power to supply to home or commercial power systems.
4. Power supply module: Due to its high voltage and high current characteristics, this device is suitable for various power supply modules, including industrial power supplies, communication equipment, and medical equipment.
The above are some examples of how this product is applicable to different areas and modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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