Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N-Channel |
60V |
|
3V |
120A |
|
|
5mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N-Channel |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N-Channel |
60V |
|
3V |
120A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N-Channel |
60V |
|
3V |
120A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N-Channel |
|
|
|
|
|
|
|
2. Parameter description:
- VDS: 60V is the maximum drain-source voltage of the MOSFET. Exceeding this voltage may cause device damage.
- VGS: 20V (±) is the maximum gate-source voltage range of the MOSFET. Exceeding this range may cause device damage.
- Vth: 3V is the threshold voltage of the MOSFET, that is, when the gate voltage is higher than 3V, the MOSFET starts to turn on.
- RDS(ON): It is 5mΩ when VGS=10V, which means that when the gate voltage is 10V, the static drain-source resistance of the MOSFET is 5mΩ, which determines the resistance size of the MOSFET when it is turned on.
- ID: 120A is the maximum continuous drain current of the MOSFET. Exceeding this current may cause the device to overheat and be damaged.
Domain and module applications：
3. Application fields and module examples:
- Power modules: Due to its low drain-source resistance and high drain current capability, 057N06N-VB is suitable for high-performance power modules such as electric vehicle charging piles and industrial power supplies.
- Motor drives: Due to its high current capability, it can be used in electric vehicle drives and industrial motor drives, providing high efficiency and high performance.
- Aerospace: Due to its high voltage and current capabilities, it is suitable for high-performance power supplies and control systems in the aerospace field.
Please note that the above examples are only used to illustrate the possible application fields and modules of this MOSFET, and the actual application needs to be evaluated according to specific design requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
Download now
中文
English
Back to previous page
