VBMB18R06S Product details
Product introduction:
VBsemi's VBMB18R06S is a Single N field effect transistor (MOSFET) with high voltage 800V, low gate voltage drive (Vth=3.5V) and low on-resistance (800mΩ@VGS=10V), suitable for various power electronics application.
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 30(±V) | 3.5V | 6A | 800(mΩ) | SJ_Multi-EPI |
- Model: VBMB18R06S
- Brand: VBsemi
- Type: Single N MOSFET
- High voltage withstand (VDS): 800V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (RDS(on)): 800m次@VGS=10V
- Maximum drain current (ID): 6A
- Technology: SJ_Multi-EPI
-Package: TO220F
Domain and module applications:
Examples of applicable fields and modules:
1. Industrial power modules: Due to high voltage tolerance and low on-resistance, VBMB18R06S can be used in switching power supplies, inverters and DC-DC converters in industrial power modules.
2. Wind energy conversion system: In wind energy conversion system, this MOSFET can be used to control the power conversion and regulation of wind turbines.
3. Solar inverter: It is suitable for the direct current to alternating current (DC-AC) conversion stage in the solar inverter to help convert the direct current generated by the solar panel into alternating current.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image