Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220F |
Single-N |
800V |
30（±V） |
3.5V |
6A |
|
|
800(mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Model: VBMB18R06S
- Brand: VBsemi
- Type: Single N MOSFET
- High voltage withstand (VDS): 800V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (RDS(on)): 800m次@VGS=10V
- Maximum drain current (ID): 6A
- Technology: SJ_Multi-EPI
-Package: TO220F
Domain and module applications：
Examples of applicable fields and modules:
1. Industrial power modules: Due to high voltage tolerance and low on-resistance, VBMB18R06S can be used in switching power supplies, inverters and DC-DC converters in industrial power modules.
2. Wind energy conversion system: In wind energy conversion system, this MOSFET can be used to control the power conversion and regulation of wind turbines.
3. Solar inverter: It is suitable for the direct current to alternating current (DC-AC) conversion stage in the solar inverter to help convert the direct current generated by the solar panel into alternating current.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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