Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220F |
Single-N |
850V |
30（±V） |
3.5V |
2A |
|
|
6500 (mΩ) |
Plannar |
Detailed parameter description:
- Product model: VBMB185R02
- Brand: VBsemi
- Type: Single N-channel power MOSFET
- Maximum drain-source voltage (VDS): 850V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- At VGS=10V, drain-source resistance (m次): 6500
- Maximum drain current (ID): 2A
- Technology: Plannar
-Package: TO220F
Domain and module applications：
Examples of applicable fields and modules:
1. Low-power power module: VBMB185R02 is suitable for low-power power modules, such as mobile phone chargers, small household appliances, etc., to provide stable power output.
2. LED driver: In the field of LED lighting, this device can be used in the power switch module in the LED driver to achieve brightness adjustment and color control of LED lights.
3. Small electric vehicle controller: Controller module for small electric vehicles, such as electric bicycles, scooters, etc., to realize acceleration and braking control of electric vehicles.
4. Industrial automation sensor module: In the field of industrial automation, this device can be used for power control and signal processing in the sensor module to improve the automation of industrial production.
5. Electronic consumer products module: In various electronic consumer products, such as televisions, audio, etc., VBMB185R02 can be used in power amplifier modules and power supply modules to provide reliable power support.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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