VBMB17R20SE Product details
Product introduction:
VBsemi's VBMB17R20SE is a single N-channel power MOSFET manufactured using SJ_Deep-Trench technology. Its main features include a maximum drain-source voltage (VDS) of 700V, a maximum gate-source voltage (VGS) of ±30V, a threshold voltage (Vth) of 3.5V, an on-resistance of 165mΩ at VGS=10V, and a maximum Drain current (ID) is 20A. The package form is TO220F.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 30(±V) | 3.5V | 20A | 165(mΩ) | SJ_Deep-Trench |
- VDS(V): 700V
- VGS(㊣V): ㊣30V
- Vth(V): 3.5V
- On-resistance (m次) when VGS=10V: 165m次
- ID (A): 20A
- Technology: SJ_Deep-Trench
-Package: TO220F
Domain and module applications:
- Electric vehicle drive system: Motor drive system suitable for electric vehicles, providing high power and high efficiency driving capabilities.
- Solar inverter: As the key switching element in the solar inverter, it realizes the conversion and output of solar energy.
- Industrial power module: used in switching power supplies in industrial power modules, such as high-frequency switching power supplies and UPS power supplies.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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