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VBMB17R20SE Product details

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Product introduction：

Product introduction:
VBsemi's VBMB17R20SE is a single N-channel power MOSFET manufactured using SJ_Deep-Trench technology. Its main features include a maximum drain-source voltage (VDS) of 700V, a maximum gate-source voltage (VGS) of ±30V, a threshold voltage (Vth) of 3.5V, an on-resistance of 165mΩ at VGS=10V, and a maximum Drain current (ID) is 20A. The package form is TO220F.

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Product parameter：

VB Package Configuration VDS(V) VGS Vthyp（V） ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 700V 30（±V） 3.5V 20A 165(mΩ) SJ_Deep-Trench
Detailed parameter description:
- VDS(V): 700V
- VGS(㊣V): ㊣30V
- Vth(V): 3.5V
- On-resistance (m次) when VGS=10V: 165m次
- ID (A): 20A
- Technology: SJ_Deep-Trench
-Package: TO220F

Domain and module applications：

Examples of application areas and modules:
- Electric vehicle drive system: Motor drive system suitable for electric vehicles, providing high power and high efficiency driving capabilities.
- Solar inverter: As the key switching element in the solar inverter, it realizes the conversion and output of solar energy.
- Industrial power module: used in switching power supplies in industrial power modules, such as high-frequency switching power supplies and UPS power supplies.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support：

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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