VBMB17R18S Product details
Product introduction:
VBsemi's VBMB17R18S is a single N-channel power MOSFET manufactured using SJ_Multi-EPI technology. Its main features include a maximum drain-source voltage (VDS) of 700V, a maximum gate-source voltage (VGS) of ±30V, a threshold voltage (Vth) of 3.5V, an on-resistance of 260mΩ at VGS=10V, and a maximum Drain current (ID) is 18A. The package form is TO220F.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 30(±V) | 3.5V | 18A | 260(mΩ) | SJ_Multi-EPI |
- VDS(V): 700V
- VGS(㊣V): ㊣30V
- Vth(V): 3.5V
- On-resistance (m次) when VGS=10V: 260m次
- ID (A): 18A
- Technology: SJ_Multi-EPI
-Package: TO220F
Domain and module applications:
- High-frequency switching power supply: suitable for power switch modules in high-frequency switching power supplies, such as server power supplies and power modules for telecommunications equipment.
- Solar inverter: As a key switching element in the solar inverter, it realizes high-efficiency conversion from solar panels to the power grid.
- Electric vehicle controller: Power switch used in electric vehicle controller to provide high power and high efficiency electric driving capability.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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