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VBMB17R18S Product details

Product introduction:

Product introduction:
VBsemi's VBMB17R18S is a single N-channel power MOSFET manufactured using SJ_Multi-EPI technology. Its main features include a maximum drain-source voltage (VDS) of 700V, a maximum gate-source voltage (VGS) of ±30V, a threshold voltage (Vth) of 3.5V, an on-resistance of 260mΩ at VGS=10V, and a maximum Drain current (ID) is 18A. The package form is TO220F.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 700V 30(±V) 3.5V 18A 260(mΩ) SJ_Multi-EPI
Detailed parameter description:
- VDS(V): 700V
- VGS(㊣V): ㊣30V
- Vth(V): 3.5V
- On-resistance (m次) when VGS=10V: 260m次
- ID (A): 18A
- Technology: SJ_Multi-EPI
-Package: TO220F

Domain and module applications:

Examples of application areas and modules:
- High-frequency switching power supply: suitable for power switch modules in high-frequency switching power supplies, such as server power supplies and power modules for telecommunications equipment.
- Solar inverter: As a key switching element in the solar inverter, it realizes high-efficiency conversion from solar panels to the power grid.
- Electric vehicle controller: Power switch used in electric vehicle controller to provide high power and high efficiency electric driving capability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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