Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220F |
Single-N |
700V |
30（±V） |
3.5V |
15A |
|
|
340(mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Model: VBMB17R15S
- Product type: Single N-type MOSFET
- Brand: VBsemi
- Package type: TO220F
- Technology: SJ_Multi-EPI
- Maximum drain-source voltage (VDS): 700V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance at VGS=10V: 340 m次
- Maximum drain current (ID): 15A
Domain and module applications：
Examples of applicable fields and modules:
1. Power inverter: VBMB17R15S has high drain voltage and current capability and is suitable for high-voltage switching modules in power inverters to convert DC power to AC power.
2. Electric vehicle controller: In electric vehicle controllers, high-power and high-efficiency switching devices are required to control the motor. VBMB17R15S can be used as a power switching element in electric vehicle controllers.
3. Frequency converter: Since VBMB17R15S has low on-resistance and high frequency response capability, it is suitable for power switch modules in frequency converters to control the power frequency to achieve different power outputs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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