Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220F |
Single-N |
700V |
30（±V） |
3.5V |
11A |
|
|
450 (mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Model: VBMB17R11S
- Product type: Single N-type MOSFET
- Brand: VBsemi
- Package type: TO220F
- Technology: SJ_Multi-EPI
- Maximum drain-source voltage (VDS): 700V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance at VGS=10V: 450 m次
- Maximum drain current (ID): 11A
Domain and module applications：
Examples of applicable fields and modules:
1. Electric vehicle controller: Since VBMB17R11S has high drain voltage and current capability, it is suitable for power switch modules in electric vehicle controllers, such as motor controllers for electric vehicles.
2. Solar inverter: In solar inverters, switching devices with high voltage and low on-resistance are required to achieve solar power conversion, and the parameters of VBMB17R11S make it a suitable choice for this application.
3. Industrial power module: The high-performance characteristics of VBMB17R11S make it suitable for industrial power modules to provide stable and reliable power output.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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