VBMB17R11S Product details
Product introduction:
VBsemi's VBMB17R11S is a Single N-type MOSFET with the following characteristics:
- Brand: VBsemi
-Package: TO220F
- Technology: SJ_Multi-EPI
- Maximum drain-source voltage (VDS): 700V
- Maximum gate-source voltage (VGS): ±30V
- Threshold voltage (Vth): 3.5V
- On-resistance at VGS=10V: 450 mΩ
- Maximum drain current (ID): 11A
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 30(±V) | 3.5V | 11A | 450 (mΩ) | SJ_Multi-EPI |
- Model: VBMB17R11S
- Product type: Single N-type MOSFET
- Brand: VBsemi
- Package type: TO220F
- Technology: SJ_Multi-EPI
- Maximum drain-source voltage (VDS): 700V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance at VGS=10V: 450 m次
- Maximum drain current (ID): 11A
Domain and module applications:
1. Electric vehicle controller: Since VBMB17R11S has high drain voltage and current capability, it is suitable for power switch modules in electric vehicle controllers, such as motor controllers for electric vehicles.
2. Solar inverter: In solar inverters, switching devices with high voltage and low on-resistance are required to achieve solar power conversion, and the parameters of VBMB17R11S make it a suitable choice for this application.
3. Industrial power module: The high-performance characteristics of VBMB17R11S make it suitable for industrial power modules to provide stable and reliable power output.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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