VBMB17R10S Product details
Product introduction:
The VBsemi VBMB17R10S is a single N-channel field effect transistor with a drain-to-source voltage (VDS) of up to 700V and a drain current (ID) of 10A. Made with SJ_Multi-EPI technology, it has excellent performance and stability. The package is TO220F, suitable for various applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 30(±V) | 3.5V | 10A | 390(mΩ) | SJ_Multi-EPI |
- Model: VBMB17R10S
- Brand: VBsemi
- Type: Single N-channel field effect transistor
- Drain-source voltage (VDS): 700V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 390
- Drain current (ID): 10A
- Process technology: SJ_Multi-EPI
-Package: TO220F
Domain and module applications:
1. Electric vehicle charger: Due to its high drain voltage and drain current, it is suitable for switching power supplies and inverter modules in electric vehicle chargers to achieve high efficiency and fast charging.
2. Industrial power module: It can be used in power management and motor drive modules in industrial control systems to improve system reliability and efficiency.
3. Solar inverter: suitable for switch modules in solar inverters to convert the DC output of solar panels into alternating current.
4. LED lighting module: suitable for LED lighting drivers and switching power supply modules to achieve efficient and reliable LED lighting systems.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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