Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220F |
Single-N |
700V |
30（±V） |
3.5V |
10A |
|
|
390(mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Model: VBMB17R10S
- Brand: VBsemi
- Type: Single N-channel field effect transistor
- Drain-source voltage (VDS): 700V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 390
- Drain current (ID): 10A
- Process technology: SJ_Multi-EPI
-Package: TO220F
Domain and module applications：
Examples of applicable fields and modules:
1. Electric vehicle charger: Due to its high drain voltage and drain current, it is suitable for switching power supplies and inverter modules in electric vehicle chargers to achieve high efficiency and fast charging.
2. Industrial power module: It can be used in power management and motor drive modules in industrial control systems to improve system reliability and efficiency.
3. Solar inverter: suitable for switch modules in solar inverters to convert the DC output of solar panels into alternating current.
4. LED lighting module: suitable for LED lighting drivers and switching power supply modules to achieve efficient and reliable LED lighting systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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