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VBMB17R09S Product details

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Product introduction：

Product introduction:
VBsemi's VBMB17R09S is a single N-channel power MOSFET manufactured using SJ_Multi-EPI technology. Its main features include a maximum drain-source voltage (VDS) of 700V, a maximum gate-source voltage (VGS) of ±30V, a threshold voltage (Vth) of 3.5V, an on-resistance of 550mΩ at VGS=10V, and a maximum Drain current (ID) is 9A. The package form is TO220F.

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Product parameter：

VB Package Configuration VDS(V) VGS Vthyp（V） ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 700V 30（±V） 3.5V 9A 550(mΩ) SJ_Multi-EPI
Detailed parameter description:
- VDS(V): 700V
- VGS(㊣V): ㊣30V
- Vth(V): 3.5V
- On-resistance (m次) when VGS=10V: 550m次
- ID (A): 9A
- Technology: SJ_Multi-EPI
-Package: TO220F

Domain and module applications：

Examples of application areas and modules:
- Electric vehicle motor drive: suitable for motor drive modules in electric vehicles, providing efficient and high-power driving capabilities.
- Industrial high-voltage switch: used as a high-voltage switching component in industrial control systems to achieve precise control and protection of high-voltage equipment.
- Solar inverter: As a key switching element in the solar inverter, it realizes the conversion and output of solar energy.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support：

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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