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VBMB17R08SE Product details

Product introduction:

Product Introduction: VBsemi's VBMB17R08SE is a single N-channel power MOSFET with a drain-source voltage (VDS) of 700V, a gate-source voltage (VGS, plus or minus) of 30V, and a threshold voltage of 3.5V (Vth). It uses SJ_Deep-Trench technology and is packaged as TO220F.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 700V 30(±V) 3.5V 8A 540(mΩ) SJ_Deep-Trench
Detailed parameter description:
- Drain-source voltage (VDS): 700V
- Gate-source voltage (VGS, plus or minus): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance when VGS=10V: 540m次
- Maximum drain current (ID): 8A

Domain and module applications:

Examples of applicable fields and modules:
1. Industrial power module: Because VBMB17R08SE has a high drain-source voltage and low on-resistance, it can be used to design industrial-grade power modules to provide stable and reliable power output.
2. Electric vehicle charging piles: In electric vehicle charging piles, power MOSFETs that can withstand high voltage and current are required. VBMB17R08SE can be used to design the power switching circuits of these charging piles.
3. Solar Inverter: Solar inverters need to handle high voltage and current and convert the DC power collected by the solar panels into AC power. VBMB17R08SE is suitable for use in the power switching part of solar inverters.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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