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VBMB17R07 Product details

Product introduction:

Product Introduction: VBsemi's VBMB17R07 is a single N-channel power MOSFET with a drain-source voltage (VDS) of 700V, a gate-source voltage (VGS, plus or minus) of 30V, and a threshold voltage of 3.5V (Vth). Using Plannar technology, packaged as TO220F.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 700V 30(±V) 3.5V 7A 1000 (mΩ) 800 (mΩ) Plannar
Detailed parameter description:
- Drain-source voltage (VDS): 700V
- Gate-source voltage (VGS, plus or minus): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance when VGS=4.5V: 1000m次
- On-resistance when VGS=10V: 800m次
- Maximum drain current (ID): 7A

Domain and module applications:

Examples of applicable fields and modules:
1. Power inverter: Since VBMB17R07 has a high drain-source voltage and moderate drain current, it can be used to design power inverters to convert DC power into AC power, and is suitable for solar power generation systems, wind power generation systems, etc. .
2. Electric vehicle charger: In electric vehicle chargers, power MOSFETs that can withstand high voltage and current are required. VBMB17R07 can be used to design the power switch circuit of the charger to provide efficient and stable charging performance.
3. Industrial automation equipment: VBMB17R07 is suitable for power switch modules in industrial automation equipment, such as motor control, industrial furnace control, etc., providing reliable power regulation and control functions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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