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VBMB17R05SE Product details

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Product introduction：

VBsemi's VBMB17R05SE is a single N-channel field effect transistor with a drain-source voltage of 700V, a gate-source voltage of 30V, and a threshold voltage of 3.5V. This product uses SJ_Deep-Trench technology and is packaged as TO220F.

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Product parameter：

VB Package Configuration VDS(V) VGS Vthyp（V） ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 700V 30（±V） 3.5V 5A 840(mΩ) SJ_Deep-Trench
Detailed parameter description:
- Drain-source voltage (VDS): 700V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 840
- Maximum drain current (ID): 5A
- Technology: SJ_Deep-Trench

Domain and module applications：

This product is suitable for the following areas and modules:
- Power management system: can be used for power switching and regulating modules to provide stable voltage and current output.
- Electric vehicles: Motor drive and battery management systems for electric vehicles, providing high efficiency and performance.
- Industrial automation: It can be used in fields such as industrial motor drives, frequency converters and UPS systems to provide reliable power conversion and control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support：

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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