Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220F |
Single-N |
700V |
30（±V） |
3.5V |
5A |
|
|
1100 (mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Brand: VBsemi
- Model: VBMB17R05S
- Type: Single N-channel MOSFET
- Maximum drain-source voltage (VDS): 700V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at VGS=10V: 1100m次
- Maximum drain current (ID): 5A
- Technology: SJ_Multi-EPI
-Package: TO220F
Domain and module applications：
Application example:
The product is suitable for multiple areas and modules, such as:
- Power supply module: can be used for power switch control in power supply equipment such as switching power supplies, UPS systems and inverters.
- Solar inverter: Due to its high voltage and high current characteristics, it is suitable for DC to AC conversion control in solar inverters.
- Industrial electronic control system: It can be used for power management and current control in industrial automation equipment, frequency converters and electric vehicle charging piles.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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