VBMB17R05S Product details
Product introduction:
VBsemi's VBMB17R05S is a single N-channel MOSFET with high reliability and excellent performance. Manufactured using SJ_Multi-EPI technology and packaged in TO220F, it is suitable for a variety of applications.
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 700V | 30(±V) | 3.5V | 5A | 1100 (mΩ) | SJ_Multi-EPI |
- Brand: VBsemi
- Model: VBMB17R05S
- Type: Single N-channel MOSFET
- Maximum drain-source voltage (VDS): 700V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at VGS=10V: 1100m次
- Maximum drain current (ID): 5A
- Technology: SJ_Multi-EPI
-Package: TO220F
Domain and module applications:
The product is suitable for multiple areas and modules, such as:
- Power supply module: can be used for power switch control in power supply equipment such as switching power supplies, UPS systems and inverters.
- Solar inverter: Due to its high voltage and high current characteristics, it is suitable for DC to AC conversion control in solar inverters.
- Industrial electronic control system: It can be used for power management and current control in industrial automation equipment, frequency converters and electric vehicle charging piles.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image