Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220F |
Single-N |
700V |
30（±V） |
3.5V |
4A |
|
|
1200(mΩ) |
SJ_Deep-Trench |
Detailed parameter description:
- Model: VBMB17R04SE
- Product type: Single N-type MOSFET
- Brand: VBsemi
- Package type: TO220F
- Technology: SJ_Deep-Trench
- Maximum drain-source voltage (VDS): 700V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance at VGS=10V: 1200 m次
- Maximum drain current (ID): 4A
Domain and module applications：
Examples of applicable fields and modules:
1. Low-power switching circuit: Because VBMB17R04SE has lower on-resistance and smaller drain current capability, it is suitable for low-power switching circuits, such as power management and circuit protection.
2. LED driver: In LED lighting applications, low-power and high-efficiency switching devices are required to control the brightness of LEDs. VBMB17R04SE can be used as a power switching element in LED drivers.
3. Consumer electronics: The packaging and parameters of VBMB17R04SE make it suitable for power switching modules in consumer electronics, such as power management and power conversion in laptops, tablets and smartphones.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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