Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220F |
Single-N |
700V |
30（±V） |
3.5V |
2A |
|
|
6500 (mΩ) |
Plannar |
Detailed parameter description:
- Brand: VBsemi
- Product model: VBMB17R02
- Type: Single N-channel power MOSFET
- Maximum drain-source voltage (VDS): 700V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 6500m次
- Maximum drain current (ID): 2A
- Technology: Plannar
-Package: TO220F
Domain and module applications：
Examples of applicable fields and modules:
1. Power module: VBMB17R02 can be used in switching power supplies and inverters in various power modules to ensure high efficiency and stable performance.
2. Electric vehicle control system: This product is suitable for the motor drive system and battery management module of electric vehicles, providing reliable power control and protection functions.
3. Industrial automation equipment: used in power modules and drivers in industrial automation equipment to ensure stable operation and high-efficiency conversion of the equipment.
4. Solar inverter: VBMB17R02 can be used in solar inverters to convert DC power generated by solar panels into AC power to achieve high-efficiency conversion of solar power generation systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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