Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220F |
Single-N |
600V |
30（±V） |
3.5V |
31A |
|
|
90(mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Product model: VBMB16R31SFD
- Brand: VBsemi
- Type: Single N-channel MOSFET
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance at VGS=10V: 90m次
- Maximum drain current (ID): 31A
- Manufacturing process: SJ_Multi-EPI
-Package form: TO220F
Domain and module applications：
Examples of applicable fields and modules:
1. Automotive electronics: VBMB16R31SFD can be used in electric vehicle control modules in automotive electronic systems, such as electric vehicle drive motor control and battery management systems.
2. Power management: In the field of power management, this device can be used in switching power supply, UPS (uninterruptible power supply), battery charge and discharge management and other modules to provide stable and efficient power control.
3. Solar power generation system: As an inverter switch in a solar power generation system, VBMB16R31SFD can achieve effective conversion and output of photovoltaic power for power management of solar panels.
4. Industrial automation: In industrial control systems, this device can be used in modules such as motor drive, switch control and power regulation to provide efficient and reliable power control and protection.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
Download now
中文
English
Back to previous page
