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VBMB16R15SFD Product details

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Product introduction：

Product introduction: VBsemi's VBMB16R15SFD is a single N-type field effect transistor with a drain-source voltage (VDS) of 600V, a gate-source voltage (VGS) of 30V, and a gate threshold voltage (Vth) of 3.5V. It is suitable for for various application scenarios.

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Product parameter：

VB Package Configuration VDS(V) VGS Vthyp（V） ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 600V 30（±V） 3.5V 15A 240(mΩ) SJ_Multi-EPI
Detailed parameter description:
- VDS (drain-source voltage): 600V
- VGS (gate-to-source voltage): ㊣30V
- Vth (gate threshold voltage): 3.5V
- On-resistance (m次) when VGS=10V: 240
- Maximum drain current (ID): 15A
- Technology: SJ_Multi-EPI
-Package: TO220F

Domain and module applications：

Application example:
- Power module: Due to its high drain-source voltage and gate-source voltage, it is suitable for power modules such as switching power supplies, inverters and chargers.
- Electric vehicles: Can be used in motor drive systems of electric vehicles, supporting high voltage and high current requirements.
- Industrial automation: In industrial control systems, it can be used for motor control, solenoid valve drive and other applications to provide stable and reliable performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support：

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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