Product introduction：
Product introduction: VBsemi's VBMB16R10S is a single N-channel power field effect transistor (FET) manufactured using SJ_Multi-EPI technology. Its package is TO220F, which has excellent performance and reliability. Suitable for applications requiring high performance single N-channel FET.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220F |
Single-N |
600V |
30（±V） |
3.5V |
10A |
|
|
450 (mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Voltage parameters: VDS (drain-source voltage) is 600V, VGS (gate-source voltage) is ㊣30V, and threshold voltage (Vth) is 3.5V.
- Current parameters: At VGS=10V, the drain-source resistance (RDSon) is 450m次, and the maximum drain current (ID) is 10A.
Domain and module applications：
Applicable areas and modules:
1. Industrial electronics: used in high voltage applications such as industrial motor drives, power converters and inverters.
2. Automotive electronics: It can be used in motor drive and battery management systems in automobile electrification systems.
3. Solar energy and renewable energy: Suitable for energy conversion applications such as solar inverters and wind power systems.
4. Medical equipment: Can be used in high-voltage power supplies and drive circuits in medical equipment.
5. Communication equipment: suitable for communication equipment modules such as high-voltage DC-DC converters and power amplifiers.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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