Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220F |
Single-N |
600V |
30（±V） |
3.5V |
10A |
|
|
1000 (mΩ) |
Plannar |
Detailed parameter description:
- Product model: VBMB16R10
- Brand: VBsemi
- Structure type: Single N-channel field effect transistor (MOSFET)
- Rated voltage (VDS): 600V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance at 10V (m次): 1000
- Rated drain current (ID): 10A
- Process technology: flat process
- Package type: TO220F
Domain and module applications：
Examples of application areas:
1. Industrial electronics: VBMB16R10 can be used in industrial power supplies, motor drives, frequency converters and other equipment to provide reliable power control and protection functions.
2. Automotive electronics field: Under the trend of vehicle electrification, VBMB16R10 can be used in applications such as motor drive systems and charging piles of electric vehicles, with high performance and reliability.
3. Solar energy field: As a switching element in solar inverters, VBMB16R10 can provide stable power conversion efficiency and is suitable for DC-AC conversion modules in solar power generation systems.
4. Communication field: In electronic equipment such as power modules, inverters and DC voltage regulators used in communication base stations, VBMB16R10 can provide efficient and stable power conversion and control functions to meet the power density and reliability requirements of communication equipment. .
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
Download now
中文
English
Back to previous page
