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VBMB16R07S Product details

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Product introduction：

Product Introduction: VBsemi’s VBMB16R07S model is a single N-channel MOSFET with a drain-source voltage (VDS) of 600V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V . This product is manufactured using SJ_Multi-EPI technology and is packaged in TO220F.

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Product parameter：

VB Package Configuration VDS(V) VGS Vthyp（V） ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 600V 30（±V） 3.5V 7A 650 (mΩ) SJ_Multi-EPI
Detailed parameter description:
- VDS (drain-source voltage): 600V
- VGS (gate-source voltage): ㊣30V
- Vth (threshold voltage): 3.5V
- On-resistance when VGS=10V: 650m次
- Maximum drain current (ID): 7A
- Technology: SJ_Multi-EPI
-Package: TO220F

Domain and module applications：

Examples of applicable fields and modules:
- Power module: With a drain-source voltage of 600V and a maximum drain current of 7A, it is suitable for power modules such as AC-DC power supplies and power inverters.
- Motor Drivers: Power switching modules can be used in motor drivers for efficient motor control.
- Solar inverter: SJ_Multi-EPI technology and 650mΩ on-resistance make it suitable for power switching modules in solar inverters to achieve high-efficiency energy conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support：

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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