Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220F |
Single-N |
600V |
30（±V） |
3.5V |
5A |
|
|
850 (mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Brand: VBsemi
- Product model: VBM16R05S
- MOSFET type: Single N
- Rated voltage (VDS): 600V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance when gate-source voltage is 10V: 850m次
- Maximum continuous drain current (ID): 5A
- Technology: SJ_Multi-EPI
-Package:TO220
Domain and module applications：
Examples of applicable fields and modules:
1. Power supply devices: Due to its high voltage tolerance and on-resistance capability, VBM16R05S is suitable for power supply devices such as switching power supplies and inverters.
2. Electric vehicle charging piles: In electric vehicle charging piles, VBM16R05S can be used as a key switching element to control the current and voltage during the charging process.
3. Industrial automation: In the field of industrial automation, VBM16R05S can be used as power switches and control components, such as PLC controllers and robot control systems.
4. LED lighting: In LED lighting applications, VBM16R05S can be used as a switching tube in the driver to achieve efficient power conversion and dimming control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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