VBMB16R05S Product details
Product introduction:
VBsemi VBM16R05S is a Single N MOSFET, using SJ_Multi-EPI technology and packaged in TO220. With stable performance and high voltage resistance, it is suitable for various power control and switching applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 600V | 30(±V) | 3.5V | 5A | 850 (mΩ) | SJ_Multi-EPI |
- Brand: VBsemi
- Product model: VBM16R05S
- MOSFET type: Single N
- Rated voltage (VDS): 600V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance when gate-source voltage is 10V: 850m次
- Maximum continuous drain current (ID): 5A
- Technology: SJ_Multi-EPI
-Package:TO220
Domain and module applications:
1. Power supply devices: Due to its high voltage tolerance and on-resistance capability, VBM16R05S is suitable for power supply devices such as switching power supplies and inverters.
2. Electric vehicle charging piles: In electric vehicle charging piles, VBM16R05S can be used as a key switching element to control the current and voltage during the charging process.
3. Industrial automation: In the field of industrial automation, VBM16R05S can be used as power switches and control components, such as PLC controllers and robot control systems.
4. LED lighting: In LED lighting applications, VBM16R05S can be used as a switching tube in the driver to achieve efficient power conversion and dimming control.
Technical support:
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