Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220F |
Single-N |
600V |
30（±V） |
3.5V |
2.4A |
|
4000 (mΩ) |
3200 (mΩ) |
Plannar |
Detailed parameter description:
- Product model: VBMB16R02
- Brand: VBsemi
- Type: Single N-channel MOSFET
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance at VGS=4.5V: 4000m次
- On-resistance at VGS=10V: 3200m次
- Maximum drain current (ID): 2.4A
- Manufacturing process: Plannar
-Package form: TO220F
Domain and module applications：
Examples of applicable fields and modules:
1. Low-power power module: Because VBMB16R02 has low leakage current and moderate power characteristics, it is suitable for various low-power power modules, such as small inverters, chargers, etc.
2. Power tools: In power tools, this device can be used in motor control modules, such as electric drills, electric shears, etc., to provide efficient power output and control.
3. LED lighting control: In LED lighting systems, VBMB16R02 can be used to control the power switch of LED lamps to achieve stable driving and brightness adjustment of LED light sources.
4. Low-power electronic products: Suitable for various low-power electronic products, such as portable electronic devices, smart home products, etc., to provide stable power control and protection.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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