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VBMB165R32SE Product details
Back to previous pageProduct introduction：
Product introduction:
VBsemi VBMB165R32SE is a Single N MOSFET, using SJ_Deep-Trench technology and packaged in TO220F. Offers high performance and stability for a variety of power control and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 30（±V） | 3.5V | 32A | 89(mΩ) | SJ_Deep-Trench |
Detailed parameter description:
- Brand: VBsemi
- Product model: VBMB165R32SE
- MOSFET type: Single N
- Rated voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance when gate-source voltage is 10V: 89m次
- Maximum continuous drain current (ID): 32A
- Technology: SJ_Deep-Trench
-Package: TO220F
Domain and module applications：
Examples of applicable fields and modules:
1. Industrial motor drive: VBMB165R32SE can be used in industrial motor drives, such as motor controllers and frequency converters, to ensure efficient operation and precise control of the motor system.
2. Electric vehicles: In the power conversion module of electric vehicles, VBMB165R32SE can be used as a key switching element to achieve efficient energy conversion between the battery pack and the motor.
3. Solar inverter: As a key component in solar inverter, VBMB165R32SE can realize the conversion and transmission of solar energy and is suitable for solar power generation systems.
4. Power module: VBMB165R32SE can be used in switching power supplies, inverters and voltage regulators in various power modules, and is suitable for industrial control, communication equipment and electronic equipment.
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
