Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220F |
Single-N |
650V |
30（±V） |
3.5V |
26A |
|
|
115(mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Product model: VBMB165R26S
- Brand: VBsemi
- Package: TO220F
- Type: Single N-channel power field effect transistor (FET)
- Rated voltage (VDS): 650V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance at VGS=10V (m次): 115
- Rated current (ID): 26A
- Technology: SJ_Multi-EPI
Domain and module applications：
Examples of applicable fields and modules:
1. **Power Management Module**: VBMB165R26S can be used in various power management modules, such as switching power supplies, DC-DC converters, etc., and plays an important role in power conversion and stable output.
2. **Industrial control system**: In industrial automation and control systems, this product can be used to drive various loads, such as motors, valves, etc., to provide reliable power control.
3. **Charger and Inverter**: As a key component of chargers and inverters, VBMB165R26S can withstand high voltage and high current to achieve efficient power conversion.
4. **Electric vehicle charging pile**: This product can be used in the power switch and control module of electric vehicle charging piles to ensure the safety and efficiency of the charging process.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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