Product introduction：
VBMB165R25SE is a unipolar N-type power field effect transistor (MOSFET) with the following characteristics:
- Rated voltage up to 650V, suitable for high voltage application scenarios.
- Wide gate-source voltage range (±30V), with good voltage tolerance.
- Low threshold voltage (3.5V) helps reduce power loss.
- Drain-source resistance is 115mΩ at VGS=10V, providing reliable turn-on characteristics.
- Drain current is 25A, suitable for high power requirements.
- Using SJ_Deep-Trench technology, it has excellent performance and reliability.
- The package is TO220F, suitable for installation and heat dissipation in high power applications.
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Domain and module applications：
Examples of applicable fields and modules:
1. Industrial power module: It can be used to design high-power industrial power modules, such as electric welding equipment, industrial electric furnaces, etc.
2. Electric vehicle motor controller: suitable for motor controller modules in electric vehicles, providing powerful power output and precise control.
3. Solar inverter: used as a power conversion module in a solar power generation system to improve energy utilization efficiency.
4. High-performance server power supply: The power management module can be used in high-performance servers to ensure stable operation of the server and provide sufficient power support.
5. Industrial automation equipment: Suitable for power switch modules in industrial robots, CNC machine tools and other equipment to provide reliable power control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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