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VBMB165R22 Product details

Product introduction:

Product introduction: VBsemi's VBMB165R22 is a single N-channel MOSFET with a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. It is manufactured using planar technology and has a TO220F package, suitable for a variety of application scenarios.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 650V 30(±V) 3.5V 22A 280 (mΩ) Plannar
Detailed parameter description:
- Voltage parameters: VDS (drain-source voltage) is 650V, VGS (gate-source voltage) is ㊣30V.
- Threshold voltage: Vth (threshold voltage) is 3.5V.
- Current parameters: When VGS=10V, the minimum resistance at turn-on is 280m次, and the maximum drain current is 22A.

Domain and module applications:

Examples of applicable fields and modules:
1. Industrial motor drive: VBMB165R22 has high current and voltage tolerance and is suitable for power switch modules in industrial motor drives to provide reliable power control.
2. High-performance power supply: Its low on-resistance and high drain current make it an ideal choice in high-performance power supply systems, ensuring efficient energy conversion and stable output.
3. Automotive electronics: In automotive electronic systems, VBMB165R22 can be used in power battery management and electric drive modules of electric vehicles to provide reliable power transmission and control.

The above is an introduction to VBsemi's VBMB165R22 product, detailed parameter descriptions, and examples of applicable fields and modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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