Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220F |
Single-N |
650V |
30（±V） |
3.5V |
20A |
|
|
320 (mΩ) |
Plannar |
Detailed parameter description:
- Brand: VBsemi
- Model: VBMB165R20
- Type: Single N-channel MOSFET
- Maximum drain-source voltage (VDS): 650V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at VGS=10V: 320m次
- Maximum drain current (ID): 20A
- Technology: Plannar
-Package: TO220F
Domain and module applications：
Application example:
The product is suitable for multiple areas and modules, such as:
- Power management module: Due to its high voltage and high current characteristics, it can be used in power management applications such as switching power supplies, inverters and voltage regulators.
- Electric vehicle control system: It can be used as a drive controller for electric vehicles to achieve efficient energy conversion and motor control.
- Industrial automation field: suitable for power switches and control circuits in automation equipment such as industrial robots, PLC controllers and motor drivers.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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