VBMB165R20 Product details
Product introduction:
VBsemi's VBMB165R20 is a single N-channel MOSFET with excellent performance and reliability. Manufactured using Plannar technology and packaged in TO220F, it is suitable for various applications.
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 30(±V) | 3.5V | 20A | 320 (mΩ) | Plannar |
- Brand: VBsemi
- Model: VBMB165R20
- Type: Single N-channel MOSFET
- Maximum drain-source voltage (VDS): 650V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at VGS=10V: 320m次
- Maximum drain current (ID): 20A
- Technology: Plannar
-Package: TO220F
Domain and module applications:
The product is suitable for multiple areas and modules, such as:
- Power management module: Due to its high voltage and high current characteristics, it can be used in power management applications such as switching power supplies, inverters and voltage regulators.
- Electric vehicle control system: It can be used as a drive controller for electric vehicles to achieve efficient energy conversion and motor control.
- Industrial automation field: suitable for power switches and control circuits in automation equipment such as industrial robots, PLC controllers and motor drivers.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image