Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220F |
Single-N |
650V |
30（±V） |
3.5V |
15A |
|
|
300 (mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Brand: VBsemi
- Model: VBMB165R15S
- MOSFET type: Single N-channel
- Rated drain-source voltage (VDS): 650V
- Standard gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at VGS=10V: 300
- Maximum drain current (ID): 15A
- Process technology: SJ_Multi-EPI
-Package: TO220F
Domain and module applications：
Examples of applicable fields and modules:
1. Power electronic modules: The high voltage and high current characteristics of VBMB165R15S make it suitable for power electronic modules such as converters, inverters and power modules.
2. Automotive electronic systems: In automotive electronic systems, this MOSFET can be used in drivers, chargers and DC-DC converters for electric vehicles.
3. Solar inverter: In a solar inverter used to convert DC power generated by solar panels into AC power, VBMB165R15S can be used as a switching tube.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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