MOSFET

Your present location > Home page > MOSFET

VBMB165R11SE Product details

Product introduction:

Product Introduction: VBsemi’s VBMB165R11SE model is a single N-channel MOSFET with a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V . This product is manufactured using SJ_Deep-Trench technology and is packaged as TO220F.

File download

Download PDF document
Download now

Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 650V 30(±V) 3.5V 11A 290(mΩ) SJ_Deep-Trench
Detailed parameter description:
- VDS (drain-source voltage): 650V
- VGS (gate-source voltage): ㊣30V
- Vth (threshold voltage): 3.5V
- On-resistance when VGS=10V: 290m次
- Maximum drain current (ID): 11A
- Technology: SJ_Deep-Trench
-Package: TO220F

Domain and module applications:

Examples of applicable fields and modules:
- Power modules: Due to the drain-source voltage up to 650V and the maximum drain current of 11A, it is suitable for high-power power modules such as industrial power supplies and electric vehicle chargers.
- Electric vehicle drive system: It can be used as a power switch module in the electric vehicle drive system to achieve efficient driving and control of electric vehicles.
- Solar inverter: SJ_Deep-Trench technology and low on-resistance make it suitable for power switching modules in solar inverters to achieve high-efficiency energy conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

Sample Req

Online

Telephone

400-655-8788

WeChat

Topping

Sample Req
Online
Telephone
WeChat