Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220F |
Single-N |
650V |
30（±V） |
3.5V |
8A |
|
|
460(mΩ) |
SJ_Deep-Trench |
Detailed parameter description:
- Product model: VBMB165R08SE
- Brand: VBsemi
- Type: Single N-channel field effect transistor
-Package: TO220F
- VDS (withstand voltage): 650V
- VGS (gate-source voltage): ㊣30V
- Vth (threshold voltage): 3.5V
- On-resistance when VGS=10V: 460m次
- Maximum drain current (ID): 8A
- Technology: SJ_Deep-Trench
Domain and module applications：
Examples of application areas and modules:
1. Industrial power system: VBMB165R08SE can be used in switching power supplies, inverters and other modules in industrial power systems to achieve high-efficiency power conversion and stable power supply.
2. Automotive electronic control: It is suitable for electric vehicle drivers, vehicle charging piles and other modules in the automotive electronic control system to provide high-performance power output and charging services.
3. Solar power generation system: In solar power generation systems, this product can be used in inverters and controller modules to convert solar energy into usable electrical energy to achieve clean energy utilization.
4. Power supply equipment: VBMB165R08SE can be used in voltage regulators, switching power supplies and other modules in power supply equipment to ensure the safe and stable operation of the equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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