VBMB165R08SE Product details
Product introduction:
VBsemi VBMB165R08SE is a single N-channel field effect transistor manufactured using SJ_Deep-Trench technology. This product offers high performance and reliability for a variety of power electronics applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 30(±V) | 3.5V | 8A | 460(mΩ) | SJ_Deep-Trench |
- Product model: VBMB165R08SE
- Brand: VBsemi
- Type: Single N-channel field effect transistor
-Package: TO220F
- VDS (withstand voltage): 650V
- VGS (gate-source voltage): ㊣30V
- Vth (threshold voltage): 3.5V
- On-resistance when VGS=10V: 460m次
- Maximum drain current (ID): 8A
- Technology: SJ_Deep-Trench
Domain and module applications:
1. Industrial power system: VBMB165R08SE can be used in switching power supplies, inverters and other modules in industrial power systems to achieve high-efficiency power conversion and stable power supply.
2. Automotive electronic control: It is suitable for electric vehicle drivers, vehicle charging piles and other modules in the automotive electronic control system to provide high-performance power output and charging services.
3. Solar power generation system: In solar power generation systems, this product can be used in inverters and controller modules to convert solar energy into usable electrical energy to achieve clean energy utilization.
4. Power supply equipment: VBMB165R08SE can be used in voltage regulators, switching power supplies and other modules in power supply equipment to ensure the safe and stable operation of the equipment.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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